Products

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Furnace System

개요

  • 본 장비는 Sputtering으로 증착된 CIG Precursor를 고온 환경에서 Sulfur와 Selenium을 공급하여 결정질 CIGSSe 광흡수층으로 만드는 장치이며,
    40매 이상의 기판 Glass를 일괄 열처리할 수 있음

특징

  • Batch System
    No glass Damage or deformation(Warp free technology)
    Safety Protocols for Hydrogen Selenide (H2Se) and Hydrogen Sulfide (H2S)
    Complete Chamber sealing for ambient control & safety
    Heater design to control the uniformity of temperature

사양

  • Application

    Thermal process on glass substrate

    (Sulfurization after Selenization)

    Substrate Size ()

    1,650 × 650 (Max t=3),

    Max 48panels

    Process Tube Size ()

    Φ 1,000(D) × 2,000(L)

    Heating Temperature ()

    Max 600

    Temperature Uniformity (%)

    Within ± 5

    Other

    Forced convection type